pressure chemical vapor deposition的意思|示意
压力化学气相沉积
pressure chemical vapor deposition的网络常见释义
高压化学汽相沉积 ...deposition 化学气相沉积法 ; 催化气相化学沉积 ; 利用催化气相化学沉积 pressure chemical vapor deposition 高压化学汽相沉积 Chemical Solution Deposition 化学溶液法 ; 化学溶液沉积 ..
pressure chemical vapor deposition相关短语
1、 atmospheric pressure chemical vapor deposition 常压化学汽相淀积 ; 常压化学气相沉积法
2、 low pressure chemical vapor deposition 低压化学汽相淀积 ; 低压化学气相沉积 ; 低压化学气 ; 低压化学气相沉积系统
3、 reduced pressure chemical vapor deposition 减压化学汽相淀积
pressure chemical vapor deposition相关例句
Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow.
本发明描述使用定向反应物气流和相对于所述气流移动的基板的次大气压化学气相 沉积。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
The results show that the vapour pressure and the mass loss rate of tantalum propoxide, tantalum butoxide and niobium ethoxide are suited for chemical vapor deposition.
结果表明，丙醇钽、丁醇钽和乙醇铌的蒸汽压大小能够满足化学气相沉积的要求，有足够的挥发速率。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。