Gate-resistance的意思|示意

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栅电阻


Gate-resistance的网络常见释义

门极电阻 ...关断时在指定的条件下,能够使I GBT 断路的电流与电 压的区域(一旦超出该区域,元件可能遭到破坏) 门极电阻 (Gate-resistance) RG 门极串联电阻值(标准值记载在交换时间测定条件中) 门极充电电量 (Gate charge capacity) Qg 为了使I GBT 开通,G―E 间充电...

Gate-resistance相关短语

1、 gate resistance 栅电阻

2、 Gate resistance Rg 栅电阻Rg

3、 distributed gate resistance noise 分布闸极电阻杂讯

Gate-resistance相关例句

The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.

使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。

Provided that the value of gate resistance is acquired from measurement, the precision of the solution can be improved further.

利用测量得到的栅电阻,计算结果的精度可以进一步提高。

Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.

基于此解析式,讨论了分布栅电阻和内部沟道电阻对噪声性能的影响。

The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.

该技术将基于一个具有增强的高- k金属闸(HKMG平面工艺),新型应变硅,低电阻铜超低K互连。

Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.

通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。

The applied gate voltage gives rise to negative differential resistance (NDR).

通过直流栅电压的作用室温时产生负电阻效应。